| dc.contributor.author | Skliarchuk, Valerii | |
| dc.contributor.author | Fochuk, Petro | |
| dc.contributor.author | Bolotnikov, A. | |
| dc.contributor.author | James, Ralf | |
| dc.date.accessioned | 2021-11-30T19:40:46Z | |
| dc.date.available | 2021-11-30T19:40:46Z | |
| dc.date.issued | 2021 | |
| dc.identifier.citation | V. Skliarchuk, P. Fochuk, A. Bolotnikov, R. B. James, "Radiation resistance of near-infrared photodiodes based on Hg3In2Te6," Proc. SPIE 11838, Hard XRay, Gamma-Ray, and Neutron Detector Physics XXIII, 118381B (1 September 2021); doi: 10.1117/12.2595844 | uk_UA |
| dc.identifier.issn | 0277-786X | |
| dc.identifier.uri | https://archer.chnu.edu.ua/xmlui/handle/123456789/2891 | |
| dc.description.abstract | The design and technology for manufacturing of photodiodes with a potential barrier created by a Schottky contact on a
substrate of radiation-resistant n-Hg3In2Te6 single crystal are presented. The photosensitivity of the photodetector covers
the wavelength range ≈0.6-1.6 μm at the maximum current monochromatic sensitivity S≈1.15 A/wt for max≈1.55 μm.
To study the effect of the contact material on the effect of the absorbed dose of ionizing radiation, two types of
photodetectors Ni/n-Hg3In2Te6/In and Cr/n-Hg3In2Te6/Cr were fabricated. A study of the effect of absorbed doses of
ionizing radiation D1105
, D2106 і D3107 Gray on the main parameters of photodetectors (i.e., S, max, dark currents
at forward and reverse bias, open circuit voltage, and short circuit current). Photodiodes, based on mercury-indium
telluride (HgInTe), showed a high resistance to ionizing radiation. The best resistance to ionizing radiation was shown by
Cr/HgInTe/Cr photodiodes, which slightly changed their basic parameters at the absorbed dose of D3107 Gray. The
Ni/HgInTe/In photodetectors lost their function after exposure to an absorbed dose of D3107 Gray. In Ni/HgInTe/In
photodetectors the absorbed dose of D3107 Gray practically destroyed the indium contact. 30-50 % of the nickel front
contact was also destroyed. For comparison, similar studies were performed with photodetectors based on cadmium
telluride Cr/CdTe/In prepared by the authors an well as silicon. The silicon-based photodetectors used in this study were
provided by industrial sources. | uk_UA |
| dc.description.sponsorship | Кафедра загальної хімії та хімічного матеріалознавства | uk_UA |
| dc.language.iso | en_US | uk_UA |
| dc.publisher | SPIE | uk_UA |
| dc.subject | photodetector with potential Schottky barrier | uk_UA |
| dc.subject | radiation resistance | uk_UA |
| dc.subject | Hg3In2Te6 | uk_UA |
| dc.subject | Cr | uk_UA |
| dc.title | Radiation resistance of near-infrared photodiodes based on Hg3In2Te6 | uk_UA |
| dc.type | Article | uk_UA |
