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Radiation resistance of near-infrared photodiodes based on Hg3In2Te6

dc.contributor.authorSkliarchuk, Valerii
dc.contributor.authorFochuk, Petro
dc.contributor.authorBolotnikov, A.
dc.contributor.authorJames, Ralf
dc.date.accessioned2021-11-30T19:40:46Z
dc.date.available2021-11-30T19:40:46Z
dc.date.issued2021
dc.identifier.citationV. Skliarchuk, P. Fochuk, A. Bolotnikov, R. B. James, "Radiation resistance of near-infrared photodiodes based on Hg3In2Te6," Proc. SPIE 11838, Hard XRay, Gamma-Ray, and Neutron Detector Physics XXIII, 118381B (1 September 2021); doi: 10.1117/12.2595844uk_UA
dc.identifier.issn0277-786X
dc.identifier.urihttps://archer.chnu.edu.ua/xmlui/handle/123456789/2891
dc.description.abstractThe design and technology for manufacturing of photodiodes with a potential barrier created by a Schottky contact on a substrate of radiation-resistant n-Hg3In2Te6 single crystal are presented. The photosensitivity of the photodetector covers the wavelength range ≈0.6-1.6 μm at the maximum current monochromatic sensitivity S≈1.15 A/wt for max≈1.55 μm. To study the effect of the contact material on the effect of the absorbed dose of ionizing radiation, two types of photodetectors Ni/n-Hg3In2Te6/In and Cr/n-Hg3In2Te6/Cr were fabricated. A study of the effect of absorbed doses of ionizing radiation D1105 , D2106 і D3107 Gray on the main parameters of photodetectors (i.e., S, max, dark currents at forward and reverse bias, open circuit voltage, and short circuit current). Photodiodes, based on mercury-indium telluride (HgInTe), showed a high resistance to ionizing radiation. The best resistance to ionizing radiation was shown by Cr/HgInTe/Cr photodiodes, which slightly changed their basic parameters at the absorbed dose of D3107 Gray. The Ni/HgInTe/In photodetectors lost their function after exposure to an absorbed dose of D3107 Gray. In Ni/HgInTe/In photodetectors the absorbed dose of D3107 Gray practically destroyed the indium contact. 30-50 % of the nickel front contact was also destroyed. For comparison, similar studies were performed with photodetectors based on cadmium telluride Cr/CdTe/In prepared by the authors an well as silicon. The silicon-based photodetectors used in this study were provided by industrial sources.uk_UA
dc.description.sponsorshipКафедра загальної хімії та хімічного матеріалознавстваuk_UA
dc.language.isoen_USuk_UA
dc.publisherSPIEuk_UA
dc.subjectphotodetector with potential Schottky barrieruk_UA
dc.subjectradiation resistanceuk_UA
dc.subjectHg3In2Te6uk_UA
dc.subjectCruk_UA
dc.titleRadiation resistance of near-infrared photodiodes based on Hg3In2Te6uk_UA
dc.typeArticleuk_UA


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