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dc.contributor.authorSamila, Andriy
dc.contributor.authorHotra, Oleksandra
dc.contributor.authorPolitansky, Leonid
dc.date.accessioned2021-06-18T14:28:48Z
dc.date.available2021-06-18T14:28:48Z
dc.date.issued2020-02-29
dc.identifier.citationSamila A.P., Politansky L.F., Hotra O.Z. A portable digital multipulse NQR spectrometer for the study of the sensory properties, structure and defects in layered semiconductors. “Advanced trends in radioelectronics, telecommunications and computer engineering” : The International Conference TCSET’2020, Ukraine, Lviv-Slavske, february 25–29 2020. Lviv, 2020. P. 40-1–4.uk_UA
dc.identifier.isbn978-1-7281-5565-4
dc.identifier.urihttps://archer.chnu.edu.ua/xmlui/handle/123456789/65
dc.description.abstractThe structure of a digital pulse coherent NQR spectrometer with a minimum number of functional units for the investigation of GaSe and InSe layered semiconductor crystals is proposed. The feature of the proposed measuring setup is the implementation of all algorithms of digital processing and signal synthesis in the basis of one statically-configured FPGA EP4CE15E22C8. The digital 48-bit frequency synthesizer provides the formation of carrier frequency oscillations, which fill of the excitation pulses in the NQR frequencies range 1 – 50 MHz (isotopes 14N, 69Ga, 71Ga, 113In, 115In, and others). Reliable gating of the receiver in the pauses between the excitation pulses (up to 100 dB for the carrier frequency) is ensured by a circuit diagram of three stages of the same type on double gate field-effect transistors.uk_UA
dc.description.sponsorshipРадіотехніки та інформаційної безпеки
dc.language.isoenuk_UA
dc.publisherIEEEuk_UA
dc.relation.ispartofseriesAdvanced trends in radioelectronics, telecommunications and computer engineering;The International Conference TCSET’2020
dc.subjectradio spectrometeruk_UA
dc.subjectNQR
dc.subjecttransient process
dc.subjectFPGA
dc.titleA portable digital multipulse NQR spectrometer for the study of the sensory properties, structure and defects in layered semiconductorsuk_UA
dc.typeArticleuk_UA


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Показати скорочений опис матеріалу