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High radiation resistant crystals for x-ray and γ-radiation detectors
| dc.contributor.author | Fochuk, Petro | |
| dc.contributor.author | Skliarchuk, Valerii | |
| dc.contributor.author | Bolotnikov, A. | |
| dc.contributor.author | James, Ralf | |
| dc.contributor.author | Zakharuk, Z | |
| dc.date.accessioned | 2021-11-30T19:45:41Z | |
| dc.date.available | 2021-11-30T19:45:41Z | |
| dc.date.issued | 2021-09 | |
| dc.identifier.citation | V. Sklyarchuk, P. Fochuk, A. Bolotnikov, R. B. James, Z. Zakharuk, "High radiation resistant crystals for x-ray and γ-radiation detectors," Proc. SPIE 11838, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIII, 1183817 (1 September 2021); doi: 10.1117/12.2594082 | uk_UA |
| dc.identifier.issn | 0277-786X | |
| dc.identifier.uri | https://archer.chnu.edu.ua/xmlui/handle/123456789/2892 | |
| dc.description.abstract | Electrophysical properties of Hg2MnInTe6 single crystals grown by the modified zone melting method were studied. To expand the band-gap, a multiple part of Hg in 3(HgTe)-In2Te3 was replaced by an isovalent metal with a smaller ionic radius - Mn. Single crystals had n-type conductivity and possessed a resistivity of ρ≈5×106 cm (293 K), which was determined from the linear region of the current-voltage (I-V) characteristics for In/Hg2MnInTe6/In structure with two ohmic contacts. The product µτ≈ (1.7-3.4)×10-4 V-1 cm2 is determined. Compensation degree (≈ 0.99) of the semiconductor material and the energy position of deep level Ed ≈ 0.37-0.4 eV responsible for the dark conductivity were determined from measurements of the temperature dependence of the resistivity and space-charge limited currents (SCLC). From the optical measurements, the band-gap of single crystals was determined, which is equal to Eg = 1.15 eV (293 K). Au/Hg2MnInTe6/In structures with rectifying contacts were fabricated. | uk_UA |
| dc.description.sponsorship | Кафедра загальної хімії та хімічного матеріалознавства | uk_UA |
| dc.language.iso | en_US | uk_UA |
| dc.publisher | SPIE | uk_UA |
| dc.subject | radiation-resistant single crystals | uk_UA |
| dc.subject | Hg2MnInTe6 | uk_UA |
| dc.subject | compensation degree | uk_UA |
| dc.subject | ohmic contact | uk_UA |
| dc.subject | Schottky contact | uk_UA |
| dc.subject | SCLC | uk_UA |
| dc.title | High radiation resistant crystals for x-ray and γ-radiation detectors | uk_UA |
| dc.type | Article | uk_UA |
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